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Abstract The coupling between the spin degrees of freedom and macroscopic mechanical motions, including striction, shearing, and rotation, has attracted wide interest with applications in actuation, transduction, and information processing. Experiments so far have established the mechanical responses to the long‐range ordered or isolated single spin states. However, it remains elusive whether mechanical motions can couple to a different type of magnetic structure, the non‐collinear spin textures, which exhibit nanoscale spatial variations of spin (domain walls, skyrmions,etc.) and are promising candidates to realize high‐speed computing devices. Here, collective spin texture dynamics is detected with nanoelectromechanical resonators fabricated from 2D antiferromagnetic (AFM) MnPS₃with 10⁻⁹strain sensitivity. By examining radio frequency mechanical oscillations under magnetic fields, new magnetic transitions are identified with sharp dips in resonant frequency. They are attributed to collective AFM domain wall motions as supported by the analytical modeling of magnetostriction and large‐scale spin‐dynamics simulations. Additionally, an abnormally large modulation in the mechanical nonlinearity at the transition field infers a fluid‐like response due to ultrafast domain motion. The work establishes a strong coupling between spin texture and mechanical dynamics, laying the foundation for electromechanical manipulation of spin texture and developing quantum hybrid devices. 

We report on the experimental demonstration of high-performance suspended channel transistors with single- and bilayer (1L and 2L) molybdenum disulfide (MoS2), and on operating them as vibrating channel transistors (VCTs) and exploiting their built-in dynamic electromechanical coupling to read out picoampere (pA) transconduction current directly at the vibrating tones, without frequency conversion or down-mixing, for picometer (pm)-scale motion detection at room temperature. The 1L- and 2L-MoS2 VCTs exhibit excellent n-type transistor behavior with high mobility [150 cm2/(V·s)] and small subthreshold swing (98 mV/dec). Their resonance motions are probed by directly measuring the small-signal drain-source currents (iD). Electromechanical characteristics of the devices are extracted from the measured iD, yielding resonances at f0 = 31.83 MHz with quality factor Q = 117 and f0 = 21.43 MHz with Q = 110 for 1L- and 2L-MoS2 VCTs, respectively. The 2L-MoS2 VCT demonstrates excellent current and displacement sensitivity (Si1/2 = 2 pA/Hz1/2 and Sx1/2 = 0.5 pm/Hz1/2). We demonstrate f0 tuning by controlling gate voltage VG and achieve frequency tunability Δf0/f0 ≈ 8% and resonance frequency change Δf0/ΔVG ≈ 0.53 kHz/mV. This study helps pave the way to realizing ultrasensitive self-transducing 2D nanoelectromechanical systems at room temperature, in all-electronic configurations, for on-chip applications.